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Technical Papers

Technical Papers

An Alternative to Using MMICs for T/R Module Manufacture

Microwave Journal 2017, Feature Article by J. Walker, W. Veitschegger, R. Keshishian

A UHF 1-kW Solid-State Power Amplifier for Spaceborne SAR

PAWR 2017, by G. Formicone, J. Burger, J. Custer

A GaN Power Amplifier for 100VDC Bus in GPS L-band

PAWR 2017, by G. Formicone, J. Burger, J. Custer, W. Veitschegger, G. Bosi, A. Raffo G. Vannini

Quest for Vacuum Tubes' Replacement - 150V UHF GaN Radar Transistors

European Microwave 2016, by G. Formicone, J. Burger, J. Custer, J. Walker

Solid-State RF Power Amplifiers for ISM CW Applications Based on 100V GaN Technology

European Microwave 2016, by G. Formicone, J. Burger, J. Custer, G. Bosi, A. Raffo, G. Vannini

150V-Bias RF GaN for 1KW UHF Radar Amplifiers

CSICS 2016, by G. Formicone, J. Burger, J.Custer

Recent Advances in kW-level Pulsed GaN Transistors with Very High Efficiency

MIKON Conference 2016, Microwave & Radar Week, by J. Custer, G. Formicone and J. Walker

Solid-State Transmitters for IFF and SSR Systems

Microwave Journal 2016, Feature Article by John Walker and James Custer

RF Burn-in Analysis of 100V P-band Aerospace GaN Radar Transistors

Aerospace Conference 2016, by Gabriele Formicone: Transistors operating at 75V and 100V in P-band with drain efficiency in the 80% range and output power of 250W and 500W.

Analysis of a GaN/SiC UHF Radar Amplifier for Operation at 125V Bias

European Microwave 2015: Analysis of a GaN/SiC UHF Radar Amplifier for Operation at 125V Bias, by G. Formicone and J. Custer

Implications of Using kW-level GaN Transistors in Radar and Avionic Systems

COMCAS 2015: Implications of Using kW-level GaN Transistors in Radar and Avionic Systems, by D. Koyama, A. Barsegyan, J. Walker

Bias Sequencing and Gate Pulsing Circuit for GaN Amplifier

IRSI 2015: Bias Sequencing and Gate Pulsing Circuit for GaN Amplifier, by A. Barsegyan, V. Thangam, D. Koyama

A 100W Decade Bandwidth, High-Efficiency GaN Amplifier

European Microwave 2014: A 100W Decade Bandwidth, High-Efficiency GaN Amplifier, by J. Custer and J. Walker

A 130W LDMOS for 2.7-3.5 GHz Broadband Radar Applications

European Microwave 2011: A 130W LDMOS for 2.7-3.5 GHz Broadband Radar Applications, by G. Formicone, B. Battaglia, J. Burger, R. Keshishian, J. Titizian, W. Veitschegger

ISO Certificate

Integra Quality Documentation - ISO Certificate

Reach

Integra Quality Documentation - Reach Compliance Statement

Mixed-Mode Class E-Inverse F High Efficiency GaN Power Amplifier for P-band Space Applications

75V Operating Voltage device producing over 80% efficiency across the P-band radar band.

High Efficiency Switch Mode GaN Based Power Amplifiers for P-band Aerospace Applications

Aerospace Conference 2014: High Efficiency Switch Mode GaN Based Power Amplifiers for P-Band Aerospace Applications, by J. Custer, G. Formicone

Microwaves & RF Paris

High powered GaN technology from Integra Technologies.

Application Note on GaN transistor bias sequencing

Proper methodology for DC biasing GaN on SiC RF transistors

1KW GaN S-band Radar Transistor

COMCAS 2013: 1kW GaN S-Band Radar Transistor, by J. Walker, G. Formicone, F. Boueri, B. Battaglia

RF LDMOS Technology for pulsed L-band Transmitters

RF LDMOS Power Transistor Technology for Pulsed L-band Transmitters by G. Formicone, F. Boueri, J. Burger, W. Cheng, Y. Kim, J. Titizian

Advances in S-Band Radar Technology

Advances in S-Band Radar Technology: Reducing overall system cost through higher levels of integration. By B. Battaglia, J. Burger and J. Titizian

Analysis of Bias Effects on VSWR Ruggedness in RF LDMOS for Avionics Applications

European Microwave 2008: Analysis of Bias Effects on VSWR Ruggedness in RF LDMOS for Avionics Applications, by G. Formicone, F. Boueri, J. Burger, W. Cheng, Y. Kim, J. Titizian

High Power RF/Microwave Transistors, Pallets and Amplifiers

High Power RF/Microwave Transistors, Pallets and Amplifiers from Integra Technologies, Inc. By Apet Bersegyan