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Integra Technologies, Inc. is an ISO 9001:2008 certified manufacturer of state of the art RF power transistors, pallets and RF high power amplifiers (HPA). The facility produces 150mm (6”) wafers in its 300 square meter Class-100 clean room. In addition, device assembly and 100% functional testing is performed onsite using fully automated equipment.

Integra’s patent protected technology consists of BIPOLAR and MOSFET transistors, RF power transistors, bipolar RF power transistors, enhancement mode FET RF power transistors, RF high power amplifiers, LDMOS and VDMOS RF power transistors, and hybrid assemblies intended for Broadcast, Radar, Avionics, ECM and other miscellaneous communication applications.
In 2009 Integra launched an internal program to develop GaN RF power transistors. We are on track with our plan to begin product sampling by Q3 of 2010.
Integra is fully committed to a policy of total customer satisfaction through compliance to our customers’ requirements, on-time delivery, and continual improvement of our quality systems.

Integra excels by providing the highest power, gain and efficiency devices available. Extensive technical support and application specific designs make Integra the preferred choice for your system.


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Integra announces development of GaN technology
Integra samples world’s first GaN-on-Silicon device operating at 50 volts. Leveraging a world class design team and internal wafer fabrication facility with nearly two years of research and development has culminated in the announcement and launch of two new products the IGN2731M25 and IGN2731M50.

New 50V GaN-on-Silicon Device IGN2731M25 is one of Integra's new High Voltage GaN-on-Silicon devices, it delivers 25 watts of peak output power. With breakdown voltages approaching 200V the device is characterized at 50V operating voltage providing over 13 dB of gain and 50 % efficiency. Sampling Now!

Another New 50V GaN-on-Silicon Device IGN2731M50 is another one of Integra's new High Voltage GaN-on-Silicon devices, it delivers 50 watts of peak output power. With breakdown voltages approaching 200V the device is characterized at 50V operating voltage providing over 12 dB of gain and 50 % efficiency. Sampling Now!

Smallest 50 Ω S Band Miniaturized Power Amplifier
MPAL2731M150 with 150W peak power at its 50 Ω lead terminals, is the smallest size amplifier using Silicon technology. The LDMOS device features all gold metallization for reliability. Sampling now!

LDMOS S Band Radar
Integra’s newest development for pulsed S-band radar is the ILD3035M180.  It operates at 30V bias, with 11 dB gain and 45% efficiency. Stay tuned for similar devices in different S bands. Sampling now!

LDMOS L Band Radar

ILD1214EL200 delivers 200 peak for 16 msec, 50% dc in the frequency band of 1.2- 1.4 GHz. ILD1214L250 delivers 250W for 1 msec, 20% dc. Both feature all gold metallization for reliability. Sampling now!

LDMOS for Avionics Integra’s newest developments for pulsed Avionics is the ILD1011M550. This device and its lower power drivers set a new standard for LDMOS power and ruggedness that can withstand a 20:1 load mismatch at all phase angles! Sampling now!

50V pallets for Avionics & L-Band
Integra continues to add to the list of available pallets, now including application specific devices for Avionics and L-Band Radar. The newest products include an 850W pallet for Mode S-ELM (NGIFF), a 700W pallet for L-Band radar (1.2-1.4 GHz).

Highest Power TACAN Bipolar

IB0912M600 at 600W peak power is the highest power transistor in its class for 960-1215 MHz application. The device features all gold metallization for highest reliability. Sampling now!

Technical papers by Integra are now available for downloading and review. The Technical Papers page is located here: Technical Papers

Integra Technologies is an ISO 9001:2008 certified, global supplier of high power RF and Microwave Transistors and Amplifier Modules to Broadcast, Radar and Avionics equipment manufacturers.



Integra is an ISO 9001 - 2000  Registered Firm