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IGN0450M80HV
Model | Min Frequency (GHz) | Max Frequency (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|---|
IGN0450M80HV | 0.406 | 0.46 | 80 | 20.5 | 55 | 300µs, 6% | 100 | Input | PL32C2 |
Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
0.406
0.46
80
20.5
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
55
300µs, 6%
100
Input
IGN0450M80HV is a high power GaN-on-SiC RF power transistor that has been designed to suit the unique needs of UHF radar systems. It operates over the full 406-460 MHz bandwidth. Under 300µs, 6% duty cycle pulse conditions, it supplies a minimum of 80W of peak output power. It operates from a 100V supply voltage. For optimal thermal efficiency, the transistor is housed in a metal-based package with an epoxy-sealed ceramic lid.
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