IGN0912S110HV and IGN0912S110HVS are high power GaN-on-SiC RF power transistors that have been designed to suit the unique needs of IFF and TACAN/DME systems. They operate over the full 960 - 1220 MHz frequency range. Under 32µs, 4% duty cycle pulse conditions, they supply a minimum of 110 W of peak output power. They operate from a 100V supply voltage. For optimal thermal efficiency, the transistors are housed in a metal-based package with an epoxy-sealed ceramic lid.