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IGN0912S110HV
Model | Min Frequency (GHz) | Max Frequency (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
---|---|---|---|---|---|---|---|---|---|
IGN0912S110HV | 0.96 | 1.22 | 110 | 17.5 | 50 | 32µs, 4% | 100 | Input | PL32C2 |
Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
0.96
1.22
110
17.5
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
50
32µs, 4%
100
Input
IGN0912S110HV and IGN0912S110HVS are high power GaN-on-SiC RF power transistors that have been designed to suit the unique needs of IFF and TACAN/DME systems. They operate over the full 960 - 1220 MHz frequency range. Under 32µs, 4% duty cycle pulse conditions, they supply a minimum of 110 W of peak output power. They operate from a 100V supply voltage. For optimal thermal efficiency, the transistors are housed in a metal-based package with an epoxy-sealed ceramic lid.
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