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IGN0912S80HV

Model
Min Frequency (GHz)
Max Frequency (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
IGN0912S80HV
0.96
1.22
80
17.5
65
32µs, 4%
75
Input
PL32C2
Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
0.96
1.22
80
17.5
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
65
32µs, 4%
75
Input

IGN0912S80HV and IGN0912S80HVS are high power GaN-on-SiC RF power transistors that have been designed to suit the unique needs of IFF and TACAN/DME systems. They operate over the full 960 - 1220 MHz frequency range. Under 32µs, 4% duty cycle pulse conditions, they supply a minimum of 80 W of peak output power. They operate from a 75V supply voltage. For optimal thermal efficiency, the transistors are housed in a metal-based package with an epoxy-sealed ceramic lid.

FEATURES

GaN on SiC HEMT Technology

Output Power >80W

Pre-matched Input Impedance

High Efficiency - up to 70%

100% RF Tested Under 32µs, 4% duty cycle pulse conditions

RoHS and REACH Compliant

APPLICATION

IFF and TACAN/DME Systems

EXPORT STATUS

EAR99

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