IGN1030S3600 and IGN1030S3600S are high power GaN-on-SiC RF power transistors that have been designed to suit the unique needs of IFF/SSR avionics systems. Under 32µs, 4% duty cycle pulse conditions, they typically supply 3600 W of peak output power, with typically > 19dB of gain and 75% efficiency. They operate from a 100 V supply voltage. For optimal thermal efficiency, the transistors are housed in a metal-based package with an epoxy-sealed ceramic lid.