IGN2425S1500 is a high power GaN-on-SiC RF power transistor. It operates over 2.4 - 2.5 GHz. Under 50 μs, 1% duty cycle pulse conditions it supplies a minimum of 1.5 kW of peak output power, with typically 15.5 dB of associated gain and 58% efficiency. It operates from a 100 V supply voltage. For optimal thermal efficiency, the transistor is housed in a metal-based package with an epoxy-sealed ceramic lid.