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IGN2729M1700
Model | Min Frequency (GHz) | Max Frequency (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|---|
IGN2729M1700 | 2.7 | 2.9 | 1700 | 14 | 50 | 100 µs, 10% | 100 | Input & Output | PL64B1 |
Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
2.7
2.9
1700
14
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
50
100 µs, 10%
100
Input & Output
IGN2729M1700 and IGN2729M1700S are high power GaN-onSiC RF power transistors that have been designed to suit the unique needs of modern radar systems. They supply a minimum of 1700W of peak output power, with typically 14 dB of associated gain and 50% efficiency. They operate from a 100V supply voltage. For optimal thermal efficiency, the transistors are housed in a metal-based package with an epoxy-sealed ceramic lid.
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