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IGN2729M200HV
Model | Min Frequency (GHz) | Max Frequency (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|---|
IGN2729M200HV | 2.7 | 2.9 | 200 | 15 | 45 | 100µs, 10% | 100 | Input | PL32A2 |
Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
2.7
2.9
200
15
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
45
100µs, 10%
100
Input
GN2729M200HV and IGN2729M200HVS are high power GaN-on-SiC RF power transistors that have been designed to suit the unique needs of S band radar systems. They operate over the complete 2.7 - 2.9 GHz frequency range. Under 100µs, 10% duty cycle pulse conditions, they supply a minimum of 200 W of peak output power. They operate from a 100 V supply voltage. For optimal thermal efficiency, the transistors are housed in a metal-based package with an epoxy-sealed ceramic lid.
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