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IGN2931M2000
Model | Min Frequency (GHz) | Max Frequency (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|---|
IGN2931M2000 | 2.9 | 3.1 | 2000 | 13.5 | 58 | 60µs, 4% | 100 | Input & Output | PL64B1 |
Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
2.9
3.1
2000
13.5
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
58
60µs, 4%
100
Input & Output
IGN2931M2000 and IGN2931M2000S are high power GaN-on-SiC RF power transistors that have been designed to suit the unique needs of modern radar systems. They supply a minimum of 2000W of peak output power, with typically 13.5 dB of gain and 58% efficiency. They operate from a 100V supply voltage. For optimal thermal efficiency, the transistors are housed in a metal-based package with an epoxy-sealed ceramic lid.
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