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IGN3000S2700
Model | Min Frequency (GHz) | Max Frequency (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|---|
IGN3000S2700 | 3 | 3 | 2700 | 15 | 58 | 10µs, 1% | 125 | Input & Output | PL64B1 |
Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
3
3
2700
15
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
58
10µs, 1%
125
Input & Output
Introducing IGN3000S2700 and IGN3000S2700S, the pinnacle of S-Band power transistors available today. Powered by Integra’s Gen4 GaN/SiC, IGN3000S2700 and IGN3000S2700S deliver an astonishing 3200W of peak output power and boast a typical power gain of 16dB at an impressive 60% drain efficiency, This powerhouse of innovation is designed for practicality and efficiency, enabling replacement of traditional vacuum electron device (VED) based amplifier systems with ease, even at megawatt power levels. Experience unparalleled improvements in system size, weight, power, cost, and complexity, paving the way for the next generation of RF amplifier system performance. Elevate your system architecture with IGN3000S2700 and IGN3000S2700S and witness the future of high-performance system amplification.
FEATURES
✓ Advanced GaN/SiC Technology: Powered by Integra’s Gen4 GaN/SiC for superior performance.
✓ Impressive Efficiency: Achieve a remarkable 60% drain efficiency for optimal operation.
✓ Unbeatable Output Power: Delivering 300% more output power than competitors.
✓ Streamlined Design: Replace multiple legacy amplifiers with a single, powerful unit.
✓ Innovative Architecture: Eliminate complex power combining layers in your amplifier system.
APPLICATION
Particle Accelerators and ISM Systems
EXPORT STATUS
3A001
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