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IGNP1030S5000
Model | Min Frequency (GHz) | Max Frequency (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|---|
IGNP1030S5000 | 1.03 | 1.03 | 5000 | 19 | 73 | 32µs, 4% | 125 | Input & Output | Pallet |
Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
1.03
1.03
5000
19
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
73
32µs, 4%
125
Input & Output
IGNP1030S5000 is a high power GaN/SiC RF power module that has been designed to suit the unique needs of IFF/SSR avionics systems. Under 32µs, 4% duty cycle pulse conditions, it typically supplies 5000 W of peak output power, with 18.5dB of associated gain and 68% efficiency. It operates from a 125 V supply voltage.
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