top of page
IGNP2729M2600
Model | Min Frequency (GHz) | Max Frequency (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|---|
IGNP2729M2600 | 2.7 | 2.9 | 2600 | 14 | 50 | 100 µs, 10% | 100 | Input & Output | Pallet |
Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
2.7
2.9
2600
14
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
50
100 µs, 10%
100
Input & Output
IGNP2729M2600 is a high power GaN-on-SiC RF power amplifier pallet that has been designed to suit the unique needs of S-Band Radar systems. It operates over the full 2.7-2.9 GHz frequency range. Under 100 µs, 10% duty cycle pulse conditions it supplies 2.6 kW of peak output power, with typically 14dB of associated gain and 50% efficiency. It operates from a 100 V supply voltage.
SWaP-C²
• Size = Reduce radar system size by a 66% over competing systems
• Weight = Reduce radar system weight a factor of 55%
• System Power Density = 408W / in²
• Cost = Reduce system cost by >40%
• Complexity = Eliminate multiple combining layers
bottom of page