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IGNP2931M4000
Model | Min Frequency (GHz) | Max Frequency (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|---|
IGNP2931M4000 | 2.9 | 3.1 | 4000 | 14 | 63 | 60µs, 4% | 100 | 2.0 x 5.11 inch |
Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
2.9
3.1
4000
14
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
63
60µs, 4%
100
IGNP2931M4000 is a high power GaN-on-SiC RF power amplifier pallet that has been designed to suit the unique needs of S-Band Radar systems. It operates over the full 2.9-3.1 GHz frequency range. Under 60µs, 4% duty cycle pulse conditions it supplies 4kW of peak output power, with typically 14dB of associated gain and 63% efficiency. It operates from a 100 V supply voltage.
System Power in a component pallet form factor
Unparallelled System Power Density
Enables Disruptive Radar System Re-architecture
SWaP-C2
Size=Reduce radar system size by a 66% over competing systems
Weight = Reduce radar system weight a factor of 55%
System Power Density = 408W / in₂
Cost = Reduce system cost by >40%
Complexity = Eliminate multiple combining layers
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