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IGW4000
Model | Min Frequency (GHz) | Max Frequency (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|---|
IGW4000 | 0.5 | 4 | 80 | 14 | 50 | 150µs, 30% | 100 | 50 | PL44C2 |
Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
0.5
4
80
14
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
50
150µs, 30%
100
50
IGW4000 is a high power GaN-on-SiC RF distributed power amplifier that has been designed to suit the needs of radar and electronic warfare systems as well as general-purpose broad-band applications. It operates over the entire 0.5 - 4.0 GHz frequency range. Under 150µs, 30% Duty Cycle pulse conditions, it supplies typically >80W with 50% efficiency and 14dB gain over 0.5 - 1.5 GHz with useful performance up to 4 GHz. The amplifier is fully matched to 50Ω over the entire 0.5 - 4.0 GHz frequency range. It operates from a 100 V supply voltage. For optimal thermal efficiency, the amplifier is housed in a metal-based package with an epoxy-sealed ceramic lid.
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