IGN045M1000 and IGN045M1000S are high power GaN-on-SiC RF power transistors that have been designed to suit the unique needs of VHF band systems. They operate over the full 40 - 50 MHz frequency range. Under 100µs, 10% duty cycle pulse conditions, they supply a minimum of 1000 W of peak output power, with typically >28 dB of gain and 83% efficiency. They operate from a 100 V supply voltage. For optimal thermal efficiency, the transistors are housed in a metal-based package with an epoxy-sealed ceramic lid.