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IGN0912M2400

Model
Min Frequency (GHz)
Max Frequency (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
IGN0912M2400
0.96
1.22
2400
21
70
24 x (3.5µs on, 11µs off) Pulse Length, 1.1% LTDC
75
Input
PL84A1
Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
0.96
1.22
2400
21
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
70
24 x (3.5µs on, 11µs off) Pulse Length, 1.1% LTDC
75
Input

High power GaN-on-SiC RF power transistors that have been designed to suit the
unique needs of TACAN systems.

FEATURES

GaN on SiC HEMT Technology

Output Power >2400 W

Pre-matched Input Impedance

100% RF Tested under 24 x (3.5µs on, 11µs off), LTDC =1.1% pulse conditions

RoHS and REACH Compliant

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APPLICATION

TACAN and DME Systems

EXPORT STATUS

EAR99

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