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IGN0912M2400
Model | Min Frequency (GHz) | Max Frequency (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|---|
IGN0912M2400 | 0.96 | 1.22 | 2400 | 21 | 70 | 24 x (3.5µs on, 11µs off) Pulse Length, 1.1% LTDC | 75 | Input | PL84A1 |
Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
0.96
1.22
2400
21
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
70
24 x (3.5µs on, 11µs off) Pulse Length, 1.1% LTDC
75
Input
High power GaN-on-SiC RF power transistors that have been designed to suit the
unique needs of TACAN systems.
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