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IGN0912S5000
Model | Min Frequency (GHz) | Max Frequency (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|---|
IGN0912S5000 | 0.96 | 1.22 | 5000 | 19 | 75 | 32µs, 4% | 125 | Input | PL124A1 |
Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
0.96
1.22
5000
19
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
75
32µs, 4%
125
Input
IGN0912S5000 and IGN0912S5000S are high power GaN-on-SiC RF power transistors that have been designed to suit the unique needs of TACAN, DME and IFF/SSR avionics systems. Under 32µs, 4% duty cycle pulse conditions, they supply 5000 W of peak output power, with 18dB of associated gain and 70% efficiency. They operate from a 125 V supply voltage. For optimal thermal efficiency, the transistors are housed in a metal-based package with an epoxy-sealed ceramic lid.
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