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IGN1011S50HV

Model
Min Frequency (GHz)
Max Frequency (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
IGN1011S50HV
1.03
1.09
50
18.5
55
32µs, 4%
100
Input
PL32C2
Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
1.03
1.09
50
18.5
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
55
32µs, 4%
100
Input

in a metal-based package with an epoxy-sealed ceramic lid.

FEATURES

GaN on SiC HEMT Technology

Output Power >50W

Pre-matched Input Impedance

High Efficiency - up to 60%

100% RF Tested Under 32µs, 4% duty cycle pulse conditions

RoHS and REACH Compliant

APPLICATION

IFF and SSR Avionic Systems

EXPORT STATUS

EAR99

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