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IGN2425S1500
Model | Min Frequency (GHz) | Max Frequency (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|---|
IGN2425S1500 | 2.4 | 2.5 | 1500 | 15 | 58 | 50µs, 1% | 100 | Input & Output | PL44E1 |
Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
2.4
2.5
1500
15
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
58
50µs, 1%
100
Input & Output
IGN2425S1500 is a high power GaN-on-SiC RF power transistor. It operates over 2.4 - 2.5 GHz. Under 50 μs, 1% duty cycle pulse conditions it supplies a minimum of 1.5 kW of peak output power, with typically 15.5 dB of associated gain and 58% efficiency. It operates from a 100 V supply voltage. For optimal thermal efficiency, the transistor is housed in a metal-based package with an epoxy-sealed ceramic lid.
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