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IGT1011S150
Model | Min Frequency (GHz) | Max Frequency (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|---|
IGT1011S150 | 1.03 | 1.09 | 150 | 37 | 45 | 32µs, 4% | 50 | Input & Output | PFC77A1 |
Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
1.03
1.09
150
37
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
45
32µs, 4%
50
Input & Output
IGT1011S150 is a high power, two-stage RF power transistor that has two discrete GaN-on-SiC transistors inside a single package. It has been designed to suit the unique needs of IFF/SSR avionics systems. It operates at both 1030 and 1090 MHz. Under 32µs pulse length, 4% duty cycle pulse conditions, it supplies a minimum of 150 W of peak output power, with typically >37 dB of gain. It operates from a 50 V supply voltage. For optimal thermal efficiency, the transistor is housed in a metal-based package with an epoxy-sealed ceramic lid.
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