Fully-matched (50-Ohm), GaN-on-SiC and LDMOS RF and Microwave Power Transistors for S-, C-, and X-band Radar Systems

One level up from our pre-matched transistors, Integra offers a suite of space-saving and easy-to-implement fully matched (50-ohm) transistors. These ultra-efficient transistors enable you to achieve SWaP-C objectives by getting more functional use out of the transistor spot in your high power amplifier's (HPA's) block diagram. These solid-state RF Power Transistors are currently designed for RF and microwave applications from 2.7 GHz to 12 GHz (S-band, C-band, X-band) and offer output power up to 135 W. They are designed with thermally-efficient metallized packages, and provide efficiencies up to 55%. They are the ideal RF Power Transistors for advance pulsed radar design applications.

Page Image Integra offers a suite of space-saving and easy-to-implement 50-ohm Fully-matched, GaN-on-SiC and LDMOS RF Power Transistors for S-band to X-band Radar System Design.
RF Power Transistors for New Designs
Model Frequency Low
(GHz)
Frequency High
(GHz)
Minimum
Output Power
(W)
Typical
Gain
(dB)
Typical
Efficiency
(%)
Pulse  Width
& Duty Factor
Voltage
(V)
Matching
Ohm
Package
COMPARE
2.7 2.9 300 16 70 150µs 10% 50 50 PM67A1
2.7 3.1 130 16 62 300µs, 10% 50 50 PL44A1
2.7 3.1 130 12 43 300µs, 10% 32 50 P64H2
2.7 3.1 15 12 50 300µs, 10% 32 50 PL32A2
2.7 3.1 30 12 50 300µs, 10% 32 50 PL32A2
3 3.5 15 12 45 300µs, 10% 32 50 PL32A2
3 3.5 30 12 45 300µs, 10% 32 50 PL32A2
3.1 3.5 115 11 50 300µs, 10% 40 50 PL44A1
3.1 3.5 135 13.5 55 300µs, 10% 46 50 PL44A1
5.2 5.9 25 12 45 CW 36 50 PL44C2
5.2 5.9 50 13 50 CW 28 50 PL44C2
5.2 5.9 50 14 43 1ms, 15% 50 50 PL44A1
5.4 5.9 25 15 43 50µs, 10% 45 50 PL44A1
8.2 9.2 50 12 45 100µs, 10% 50 50 PFC77B1
8.9 9.4 50 12 43 200µs, 10% 50 50 PFC77B1
9 10 50 12 43 100µs Pulse Length, 10% Duty Cycle 50 50 PFC77B1

* Asterisk indicates Advanced Pre-Release Data sheets

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