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IGT1011S400
Model | Min Frequency (GHz) | Max Frequency (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|---|
IGT1011S400 | 1.03 | 1.09 | 400 | 18 | 50 | 10µs, 4% | 60 | 50 | PM67A1 |
Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
1.03
1.09
400
18
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
50
10µs, 4%
60
50
IGT1011S400 is a high power RF power transistor that has been designed to suit the unique needs of IFF/SSR avionics systems. It operates at both 1030 and 1090 MHz. Under 10µs pulse length, 4% duty cycle pulse conditions, it supplies a minimum of 400 W of peak output power, with typically >18 dB of gain. It operates from a 60 V supply voltage. For optimal thermal efficiency, the transistor is housed in a metal-based package with an epoxy-sealed ceramic lid.
FEATURES
GaN on SiC HEMT Technology
Output Power >400 W
Fully matched to 50 Ω Impedance at the input and output
High Efficiency - up to 65%
100% RF Tested
RoHS and REACH Compliant
APPLICATION
• L-band Avionics IFF & SSR Systems
• Suitable for both uplink and downlink (Transponder/Interrogator)
EXPORT STATUS
EAR99
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