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IGT2731M130
Model | Min Frequency (GHz) | Max Frequency (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|---|
IGT2731M130 | 2.7 | 3.1 | 130 | 16 | 62 | 300µs, 10% | 50 | 50 | PL44A1 |
Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
2.7
3.1
130
16
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
62
300µs, 10%
50
50
IGT2731M130 and IGT2731M130S are high power GaN-on-SiC RF power transistors that are fully matched to 50Ω at both the input and output. They supply a minimum of 130W of peak output power, with typically >16dB of gain and 62% efficiency. They operate from a 50 V supply voltage. For optimal thermal efficiency, the transistors are housed in a metal-based package with an epoxy-sealed ceramic lid.
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