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IGT9010M50
Model | Min Frequency (GHz) | Max Frequency (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|---|
IGT9010M50 | 9 | 10 | 50 | 12 | 43 | 100µs Pulse Length, 10% Duty Cycle | 50 | 50 | PFC77B1 |
Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
9
10
50
12
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
43
100µs Pulse Length, 10% Duty Cycle
50
50
IGT9010M50 is a high power GaN-on-SiC RF power transistor that has been designed to suit the unique needs of X-Band Radar Systems. It operates over the full bandwidth of 9.0 - 10.0 GHz. Under 200µs, 10% duty cycle pulse conditions, it supplies 50 W of peak output power, with an associated 10 dB of gain and 38% efficiency. It operates from a 50 V supply voltage. For optimal thermal efficiency, the transistor is housed in a metal-based package with an epoxy-sealed ceramic lid.
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