IGT1011S150 is a high power, two-stage RF power transistor that has two discrete GaN-on-SiC transistors inside a single package. It has been designed to suit the unique needs of IFF/SSR avionics systems. It operates at both 1030 and 1090 MHz. Under 32µs pulse length, 4% duty cycle pulse conditions, it supplies a minimum of 150 W of peak output power, with typically >37 dB of gain. It operates from a 50 V supply voltage. For optimal thermal efficiency, the transistor is housed in a metal-based package with an epoxy-sealed ceramic lid.