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IGT8292M50
Model | Min Frequency (GHz) | Max Frequency (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|---|
IGT8292M50 | 8.2 | 9.2 | 50 | 12 | 45 | 100µs, 10% | 50 | 50 | PFC77B1 |
Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
8.2
9.2
50
12
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
45
100µs, 10%
50
50
IGT8292M50 is a high power GaN transistor, best suited for X-band radar applications. Specified for use under Class AB operating, this transistor operates at 8.2-9.2 GHz of operating frequency, a minimum of 50W of peak output power, 50V and 10% duty factor. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.
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