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ILT2731M30

Model
Min Frequency (GHz)
Max Frequency (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
ILT2731M30
2.7
3.1
30
12
50
300µs, 10%
32
50
PL32A2
Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
2.7
3.1
30
12
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
50
300µs, 10%
32
50

ILT2731M30 is a high power LDMOS transistor, best suited for S-band radar applications. Specified for use under Class AB operation, this transistor operates at 2.7 - 3.1 GHz of operating frequency, a minimum of 30W of peak output power, and 10% duty factor. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.

FEATURES

Si-LDMOS FET Technology

30W Output Power

Fully matched internal impedance

100% High Power RF Tested

Class AB Operation

Negative Gate Voltage/Bias Sequencing

APPLICATION

S-band Radar Systems

EXPORT STATUS

EAR99

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