|Pulse width & Duty factor||Voltage|
|1.30||1.85||200||19||55||1ms, 50%||50||Input & Output||PL44C1|
IGN1319L200 and IGN1319L200S are high power GaN-on-SiC RF power transistors that have been designed specifically for use in Lband communication links. They operate over the full bandwidth of 1.30-1.85 GHz They supply a minimum of 200W of peak output power, with typically >19 dB of gain and 55% efficiency. They operate from a 50 V supply voltage.
For package dimensions, evaluation board details, and complete test specifications, view the data sheet.