search integra
Integra

IGN1319L200 L-Band, GaN/SiC, RF Power Transistor

Frequency Low
(GHz)
Frequency High
(GHz)
Output Power
(W)
Gain
(dB)
Efficiency
(%)
Pulse  width & Duty factor Voltage
(V)
Matching Package
1.30 1.85 200 19 55 1ms, 50% 50 Input & Output PL44C1

IGN1319L200

IGN1319L200S

IGN1319L200 and IGN1319L200S are high power GaN-on-SiC RF power transistors that have been designed specifically for use in Lband communication links. They operate over the full bandwidth of 1.30-1.85 GHz They supply a minimum of 200W of peak output power, with typically >19 dB of gain and 55% efficiency. They operate from a 50 V supply voltage.

FEATURES

  • GaN on SiC HEMT Technology
  • Output Power >200 W
  • Pre-matched Input & Output Impedance
  • High Efficiency - up to 55%
  • 100% RF Tested
  • RoHS and REACH Compliant
  • IGN1319L200 has a bolt-down flange, IGN1319L200S is the earless flange option

APPLICATIONS

  • L band Communication Links

EXPORT STATUS

  • EAR99


For package dimensions, evaluation board details, and complete test specifications, view the data sheet.

Integra

Get our Updates:



Privacy Policy


Integra Technologies
© 1997 - 2018 Integra Technologies, Inc. All Rights Reserved
Get our Updates