|Pulse width & Duty factor||Voltage|
|2.0||2.4||200||19||55||1ms, 50%||50||Input & Output||PL44C1|
IGN2024L200 and IGN2024L200S are high power GaN-on-SiC RF power transistors that have been designed specifically for use in S- band communication links. They operate over the full bandwidth of 2.00 - 2.40 GHz They supply a minimum of 200W of peak output power, with typically >19 dB of gain and 55% efficiency. They operate from a 50 V supply voltage.
For package dimensions, evaluation board details, and complete test specifications, view the data sheet.