|Pulse width &|
( Duty factor)
|0.40||0.45||850||20||75||300µs, 10%||50||3.0 x 1.72 inch|
IGNP0450M850 is a high power GaN-on-SiC RF power module that has been designed to suit the unique needs of P band radar systems. It operates over the full 400-450 MHz frequency range. Under 300µs, 10% duty cycle pulse conditions, it supplies a minimum of 850 W of peak output power, with typically >20 dB of gain and 75% efficiency. It operates from a 50 V supply voltage.
For package dimensions, evaluation board details, and complete test specifications, view the data sheet.