IGNP0450M850 P-Band, GaN/SiC, RF Power Module

Frequency Low
(GHz)
Frequency High
(GHz)
Output Power
(W)
Gain
(dB)
Efficiency
(%)
Pulse width & Duty factor Voltage
(V)
Size
0.4 0.45 850 20 75 300µs, 10% 50 3.0 x 1.72 inch

IGNP0450M850

IGNMP0912CW150 is a 50-Ohm 2- stage high power module (aka pallet) for L-band avionics systems operating over the instantaneous bandwidth of 0.96-1.24 GHz. This module supplies a minimum of 150W of peak pulse power under CW conditions. All units are 100% screened for large signal RF parameters.

FEATURES

  • GaN on SiC HEMT Technology
  • Output Power >850W
  • Pre-matched Input Impedance
  • Exceptionally High Efficiency - up to 78%
  • 100% RF Tested Under 300µs, 10% duty cycle pulse conditions

APPLICATIONS

  • P-band Radar Systems

EXPORT STATUS

  • TBD


For package dimensions, evaluation board details, and complete test specifications, view the data sheet.

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