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IGNP0450M850 P-Band, GaN/SiC, RF Power Module

Frequency Low
(GHz)
Frequency High
(GHz)
Output Power
(W)
Gain
(dB)
Efficiency
(%)
Pulse width &
( Duty factor)
Voltage
(V)
Size
0.40 0.45 850 20 75 300µs, 10% 50 3.0 x 1.72 inch
IBP1011L900

IGNP0450M850 is a high power GaN-on-SiC RF power module that has been designed to suit the unique needs of P band radar systems. It operates over the full 400-450 MHz frequency range. Under 300µs, 10% duty cycle pulse conditions, it supplies a minimum of 850 W of peak output power, with typically >20 dB of gain and 75% efficiency. It operates from a 50 V supply voltage.

FEATURES

  • GaN on SiC HEMT Technology
  • Output Power >850W
  • Pre-matched Input Impedance
  • Exceptionally High Efficiency - up to 78%
  • 100% RF Tested Under 300µs, 10% duty cycle pulse conditions

APPLICATIONS

  • P-band Radar Systems

EXPORT STATUS

  • TBD


For package dimensions, evaluation board details, and complete test specifications, view the data sheet.

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