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IGT5259CW50 C-Band, GaN/SiC, RF Power Transistor

Frequency Low
(GHz)
Frequency High
(GHz)
Output Power
(W)
Gain
(dB)
Efficiency
(%)
Pulse width &
Duty factor
Voltage
(V)
Matching: OhmPackage
5.20 5.90 50 13 50 CW 28 50PL44C2

IGT5259CW50

IGT5259CW50

IGT5259CW50 and IGT5259CW50S are high power GaN-on-SiC RF power transistors that have been designed to suit the unique needs of C-Band Radar Systems. They operate over the full bandwidth of 5.2-5.9 GHz. Under CW conditions, they supply 50 W of RF output power, with an associated 11 dB of gain and 40% efficiency. They operate from a 28 V supply voltage. For optimal thermal efficiency, the transistors are housed in a metal-based package with an epoxysealed ceramic lid.

FEATURES

  • GaN on SiC HEMT Technology
  • Output Power >50 W
  • Fully matched to 50 Ω Impedance at both Input and Output
  • High Efficiency - up to 50%
  • 100% RF Tested
  • RoHS and REACH Compliant
  • IGT5259CW50 has a bolt-down flange, IGT5259CW50S is the earless flange option

APPLICATIONS

  • C-band Radar Systems

EXPORT STATUS

  • 3A001


For package dimensions, evaluation board details, and complete test specifications, view the data sheet.

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