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Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
0.96
1.215
45
21
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
57
444x (7µs On, 6µs Off), 22.7%
50
Input

IGN0912L45

Model
Min Frequency (GHz)
Max Frequency (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
IGN0912L45
0.96
1.215
45
21
57
444x (7µs On, 6µs Off), 22.7%
50
Input
PL32A2

IGN0912L45 is a high power GaN transistor best suited for L-band radar applications. Specified for use under Class AB operation, this transistor offers 0.96-1.22 GHz of operating frequency, minimum of 45W of peak pulse power, 28V and 22.7% duty factor. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.

FEATURES

GaN on SiC HEMT Technology

45W Output Power

Class AB Operation

Pre-matched Internal Impedance

100% High Power RF Tested

Negative Gate Voltage/Bias Sequencing

APPLICATION

L-Band Avionics

EXPORT STATUS

EAR99

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