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Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
1.03
1.09
60
19.5
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
65
48x (32µs On, 18µs Off), 6.4%
50
Input

IGN1011L60

Model
Min Frequency (GHz)
Max Frequency (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
IGN1011L60
1.03
1.09
60
19.5
65
48x (32µs On, 18µs Off), 6.4%
50
Input
PL32A2

IGN1011L60 is a high power GaN transistor best suited for L-band radar applications. Specified for use under Class AB operation, this transistor offers 1.030 - 1.090 GHz of operating frequency, minimum of 60W of peak pulse power, 50V and 6.4% duty factor. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.

FEATURES

GaN on SiC HEMT Technology

60W Output Power

Class AB Operation

Pre-matched Internal Impedance

100% High Power RF Tested

Negative Gate Voltage/Bias Sequencing

APPLICATION

L-Band Avionics

EXPORT STATUS

EAR99

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