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Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
1.03
1.09
640
18.5
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
65
48 x (32μs on, 18μs off)
50
Input & Output
IGN1011L600
Model | Min Frequency (GHz) | Max Frequency (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|---|
IGN1011L600 | 1.03 | 1.09 | 640 | 18.5 | 65 | 48 x (32μs on, 18μs off) | 50 | Input & Output | PL44C1 |
IGN1011L600 and IGN1011L600S are high power GaN-on-SiC RF power transistors that have been designed to suit the unique needs of IFF systems. Under ELM Mode S [48x (32μs on, 18μs off), 6.4% Long Term Duty Cycle] pulse conditions, they supply a minimum of 640 W of peak output power, with typically 18.5dB of associated gain and 65% efficiency. They operate from a 50V supply voltage.
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