IGN1011M600 and IGN1011M600S are high power GaN-on-SiC RF power transistors that have been designed to suit the unique needs of IFF/SSR avionics systems. They operate at both 1030 and 1090 MHz. Under 128μs pulse length, 2% duty cycle pulse conditions they supply a minimum of 600 W of peak output power, with typically >17 dB of gain and 65% efficiency. They operate from a 50 V supply voltage. For optimal thermal efficiency, the transistors are housed in a metalbased package with an epoxy-sealed ceramic lid.