top of page
Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
1.03
1.03
800
17
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
65
128µs, 2%
50
Input
IGN1030M800
Model | Min Frequency (GHz) | Max Frequency (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|---|
IGN1030M800 | 1.03 | 1.03 | 800 | 17 | 65 | 128µs, 2% | 50 | Input | PL84A1 |
IGN1030M800 and IGN1030M800S are high power GaN-onSiC RF power transistors that have been designed to suit the unique needs of IFF/SSR avionics systems. They operate at 1030 MHz. Under 128µs, 2% duty-cycle pulse conditions, they supply a minimum of 800 W of peak output power, with typically 17 dB of associated gain and 65% efficiency. They operate from a 50 V supply voltage. For optimal thermal efficiency, the transistors are housed in a metal-based package with an epoxy-sealed ceramic lid.
FEATURES
GaN on SiC HEMT Technology
Output Power >800 W
Pre-matched Input Impedance
High Efficiency - up to 65%
100% RF Tested Under 128µs, 2% duty-cycle pulse conditions
RoHS and REACH Compliant
Full non-linear electrothermal model available, please contact the
factory
APPLICATION
L-band Avionics IFF & SSR Systems
EXPORT STATUS
EAR99
bottom of page