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Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
1.03
1.03
1400
20
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
68
32μs, 4%
50
Input
IGN1030S1400
Model | Min Frequency (GHz) | Max Frequency (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|---|
IGN1030S1400 | 1.03 | 1.03 | 1400 | 20 | 68 | 32μs, 4% | 50 | Input | PL84A1 |
IGN1030S1400 and IGN1030S1400S are high power GaN-on-SiC RF power transistors that have been designed to suit the unique needs of IFF/SSR avionics systems. They supply a minimum of 1400 W of peak output power, with typically >20 dB associated gain and 68% efficiency. They operate from a 50 V supply voltage. The transistors are packaged in a high thermal conductivity package for optimized thermal performance.
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