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Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
1.03
1.03
1400
20
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
68
32μs, 4%
50
Input

IGN1030S1400

Model
Min Frequency (GHz)
Max Frequency (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
IGN1030S1400
1.03
1.03
1400
20
68
32μs, 4%
50
Input
PL84A1

IGN1030S1400 and IGN1030S1400S are high power GaN-on-SiC RF power transistors that have been designed to suit the unique needs of IFF/SSR avionics systems. They supply a minimum of 1400 W of peak output power, with typically >20 dB associated gain and 68% efficiency. They operate from a 50 V supply voltage. The transistors are packaged in a high thermal conductivity package for optimized thermal performance.

FEATURES

GaN on SiC HEMT Technology

Output Power >1400 W

Pre-matched Input Impedance

High Efficiency - up to 72%

100% RF Tested Under 32μs, 4% duty cycle pulsed

RoHS and REACH Compliant

APPLICATION

L-band Avionics IFF & SSR Systems and Suitable for uplink and downlink

EXPORT STATUS

EAR99

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