top of page
Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
1.2
1.4
650
12
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
72
300µs, 10%
50
Input & Output
IGN1214M650A
Model | Min Frequency (GHz) | Max Frequency (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|---|
IGN1214M650A | 1.2 | 1.4 | 650 | 12 | 72 | 300µs, 10% | 50 | Input & Output | PL95A1 |
IGN1214M650A is a high power GaN-on-SiC RF power transistor that has been designed to suit the unique needs of modern radar systems. It supplies a minimum of 650 W of peak output power, with typically >12 dB of gain and 72% efficiency. It operates from a 50 V supply voltage. For optimal thermal efficiency, the transistor is housed in a metal-based package with an epoxy-sealed ceramic lid.
bottom of page