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Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
3.1
3.5
250
13
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
55
100µs, 10%
50
Input & Output

IGN3135M250

Model
Min Frequency (GHz)
Max Frequency (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
IGN3135M250
3.1
3.5
250
13
55
100µs, 10%
50
Input & Output
PL44C1

IGN3135M250 is a high power GaN transistor, best suited for S-band radar applications. Specified for use under Class AB operation, this transistor operates at 3.1-3.5 GHz of operating frequency, a minimum of 250W of peak output power, 50V, and 10% duty factor. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.

FEATURES

GaN on SiC HEMT Technology

250W Output Power

Class AB Operation

Pre-matched Internal Impedance

100% High Power RF Tested

Negative Gate Voltage/Bias Sequencing

APPLICATION

S-Band Radar

EXPORT STATUS

3A001

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