IGN0450M850 and IGN0450M850S are high power GaN-on-SiC RF power transistors that have been designed to suit the unique needs of P band radar systems. They operate over the full 400-450 MHz frequency range. Under 300µs, 10% duty cycle pulse conditions, they supply a minimum of 850 W of peak output power, with typically >20 dB of gain and 75% efficiency. They operate from a 50 V supply voltage. For optimal thermal efficiency, the transistors are housed in a metal-based package with an epoxy-sealed ceramic lid.