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Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
0.96
1.215
500
18
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
63
48x (32µs On, 18µs Off), 6.4%
50
Input
IGN0912LM500
Model | Min Frequency (GHz) | Max Frequency (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|---|
IGN0912LM500 | 0.96 | 1.215 | 500 | 18 | 63 | 48x (32µs On, 18µs Off), 6.4% | 50 | Input | PL44C1 |
IGN0912LM500 and IGN0912LM500A are high power GaN-on-SiC RF power transistors that have been designed to suit the needs of IFF/SSR avionics systems, military tactical data links, and TACAN/DME systems. They operate over the full instantaneous bandwidth of 960-1220MHz. IGN0912LM500 under ELM Mode S [48x (32µs On, 18µs Off), 6.4% Long Term Duty Cycle] pulse conditions and IGN0912LM500A under Link 16 [444x (7µs on, 6µs off), 22.7% Long Term Duty Cycle] pulse conditions both supply a minimum of 500 W of peak output power, with typically >18 dB of gain and 65% efficiency. They operate from a 50 V supply voltage. For optimal thermal efficiency, the transistors are housed in a metal-based package with an epoxy-sealed ceramic lid.
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