IGN1011L20-PB and IGN1011L20-SP are high power GaN-on-SiC RF power transistors that have been designed to suit the needs of IFF/SSR avionics systems. They operate over the full instantaneous bandwidth of 1030- 1090MHz. IGN1011L20-PB under ELM Mode S [48x (32µs on, 18µs off), 6.4% Long Term Duty Cycle] pulse conditions and IGN1011L20-SP under standard pulse conditions [128µs, 2% Duty Cycle] both supply a minimum of 20 W of peak output power, with typically >20 dB of gain and 55% efficiency. They operate from a 50 V supply voltage. For optimal thermal efficiency, the transistors are housed in a metal-based package with an epoxy-sealed ceramic lid.