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Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
1.03
1.09
1000
19.2
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
60
32μs, 4%
50
Input
IGN1011S1000
Model | Min Frequency (GHz) | Max Frequency (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|---|
IGN1011S1000 | 1.03 | 1.09 | 1000 | 19.2 | 60 | 32μs, 4% | 50 | Input | PL64B1 |
IGN1011S1000 and IGN1011S1000S are high power GaN-on-SiC RF power transistors that have been designed to suit the unique needs of IFF and avionic systems. They operate at both 1030 and 1090 MHz. Under 32μs, 4% duty cycle pulse conditions, they supply a minimum of 1000 W of peak output power. They operate from a 50 V supply voltage. For optimal thermal efficiency, the transistors are housed in a metal-based package with an epoxy-sealed ceramic lid.
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