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Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
1.03
1.03
1000
18
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
80
48x (32µs On, 18µs Off), 6.4%
50
Input
IGN1030L1000
Model | Min Frequency (GHz) | Max Frequency (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|---|
IGN1030L1000 | 1.03 | 1.03 | 1000 | 18 | 80 | 48x (32µs On, 18µs Off), 6.4% | 50 | Input | PL84A1 |
IGN1030L1000 is a high power GaN RF transistor best suited for L-band avionic applications. Specified for use under Class AB operation, this transistor offers 1.03 GHz of operating frequency, minimum of 1000W of peak pulse power, 50V and 6.4% duty factor. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.
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