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Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
1.2
1.4
500
15
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
70
2µs, 20%
50
Input & Output
IGN1214L500B
Model | Min Frequency (GHz) | Max Frequency (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|---|
IGN1214L500B | 1.2 | 1.4 | 500 | 15 | 70 | 2µs, 20% | 50 | Input & Output | PL95A1 |
IGN1214L500B is a high power GaN-on-SiC RF power transistor that has been designed to suit the unique needs of modern long-pulse, long-range radar systems. It supplies a minimum of 500 W of peak output power, with typically >15 dB of gain and 70% efficiency. It operates from a 50 V supply voltage. For optimal thermal efficiency, the transistor is housed in a metal-based package with an epoxysealed ceramic lid.
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