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Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
1.2
1.4
700
18
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
65
300µs, 10%
50
Input
IGN1214M700
Model | Min Frequency (GHz) | Max Frequency (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|---|
IGN1214M700 | 1.2 | 1.4 | 700 | 18 | 65 | 300µs, 10% | 50 | Input | PL64B1 |
IGN1214M700 and IGN1214M700S are high power GaN-on-SiC RF
power transistors that have been designed to suit the unique needs
of L band radar systems. They operate over the full 1.2 - 1.4 GHz
frequency range. Under 300ms, 10% duty cycle pulse conditions,
they supply a minimum of 700 W of peak output power, with typically
>16.5 dB of gain and 60% efficiency. They operate from a 50 V
supply voltage. For optimal thermal efficiency, the transistors are
housed in a metal-based package with an epoxy-sealed ceramic lid.
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