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Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
1.3
1.45
650
18
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
60
300µs, 10%
60
Input
IGN1315M650
Model | Min Frequency (GHz) | Max Frequency (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|---|
IGN1315M650 | 1.3 | 1.45 | 650 | 18 | 60 | 300µs, 10% | 60 | Input | PL84A1 |
IGN1315M650 is a high power GaN-on-SiC RF power transistor that has been designed to suit the unique needs of modern radar systems. It supplies a minimum of 650W of peak output power, with typically >18 dB of gain and 60% efficiency. It operates from a 60 V supply voltage. For optimal thermal efficiency, the transistor is housed in a metal-based package with an epoxy-sealed ceramic lid.
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