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Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
2.4
2.9
400
13
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
50
300µs, 10%
48
Input & Output
IGN2429M400
Model | Min Frequency (GHz) | Max Frequency (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|---|
IGN2429M400 | 2.4 | 2.9 | 400 | 13 | 50 | 300µs, 10% | 48 | Input & Output | PL84A1 |
IGN2429M400 is a high power GaN transistor best suited for S-band radar applications. Specified for use under Class AB operation, this transistor offers 2.4 - 2.9 GHz of operating frequency, minimum of 400W of peak pulse power, 48V and 10% duty factor. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.
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