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Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
2.7
2.9
400
11
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
58
300µs, 10%
50
Input & Output
IGN2729M400
Model | Min Frequency (GHz) | Max Frequency (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|---|
IGN2729M400 | 2.7 | 2.9 | 400 | 11 | 58 | 300µs, 10% | 50 | Input & Output | PL64A1 |
IGN2729M400 is a high power GaN-on-SiC RF power transistor that has been designed to suit the unique needs of modern radar systems. It supplies a minimum of 400W of peak output power, with typically >11 dB of gain and 58% efficiency. It operates from a 50 V supply voltage. For optimal thermal efficiency, the transistor is housed in a metal-based package with an epoxy-sealed ceramic lid.
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